A High Performance 5.4 GHz 3V Voltage Controlled Oscillator in 0.35-≥m BiCMOS Technology

This paper presents a fully integrated 5.4-GHz CMOS Voltage-controlled Oscillator (VCO) with a low phase noise and ultra linear VCO gain (Kvco) in 0.35-μm SiGe (Silicon Germanium) BiCMOS technology. In order to increase the linearity of the VCO, a resonant circuit is proposed that consists of four parallel p-n junction varactor pairs. The VCO operate at a bias current of 3.13 mA and a supply voltage of 3.0 V with a corresponding DC power consumption of about 9.3 mW. The VCO gain changes from 214 MHz/V to 271 MHz/V. The CMOS VCO shows a fine frequency tuning range of 786 MHz. In addition, a low phase noise of-120.976 dBc/Hz at 1 MHz offset was obtained. Key word: CMOS VCO • p-n junction varactor • Kvco • SiGe BiCMOS technology • VCO gain • voltagecontrolled oscillator